W. Lei
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China and Department of Physics, Universität Duisburg-Essen, 47048, Lotharstr. 1, Duisburg, Germany

Y. L. Wang, Y. H. Chen, P. Jin, X. L. Ye, B. Xu, and Z. G. Wang
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China

The authors report the self-organized growth of InAs/InAlAs quantum wires on nominal (001) InP substrate and (001) InP substrates misoriented by 2°, 4°, and 8° towards both [−110] and [110]. The influence of substrate misorientation on the structural and optical properties of these InAs/InAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared with that grown on nominal (001) InP substrate, the density of InAs/InAlAs quantum wires grown on misoriented InP(001) substrates is enhanced. A strong lateral composition modulation effect take place in the InAlAs buffer layers grown on misoriented InP substrates with large off-cut angles (4° and 8°), which induces a nucleation template for the first-period InAs quantum wires and greatly improve the size distribution of InAs quantum wires. InAs/InAlAs quantum wires grown on InP (001) substrate 8° off cut towards [−110] show the best size homogeneity and photoluminescence intensity. ©2007 American Institute of Physics

Appl. Phys. Lett. 90, 103118 (2007); DOI:10.1063/1.2711778

阅读全文：http://link.aip.org/link/?APPLAB/90/103118/1