C. Zhao, Y. H. Chen, B. Xu, P. Jin, and Z. G. Wang
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
The
authors report the growth evolution of InAs dot and ring
nanostructures with the indium deposition amount on GaAs (001) by
droplet molecular beam epitaxy. There is a critical flux for
the indium to form InAs dots even when there is
no droplet. When the flux exceeds a critical value, In
droplets form, which act as nucleation centers for the formation
of InAs rings. ©2007
American Institute of Physics
Appl. Phys. Lett.
91, 033112 (2007); DOI:10.1063/1.2757151
