序号 | 论文名称 | 刊物名称 | 论文所在期刊的卷、期、页 | |
Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology | Chinese Physics Letters | vol. 32, no. 5, pp. 5–7, 2015. | Dai-Bing ZHOU, Hui-Tao WANG, Rui-Kang ZHANG, Bao-Jun WANG, Jing BIAN, Xin AN, Dan LU, LJ Zhao, HL Zhu,et.al | |
Modulated bandwidth enhancement in an amplified feedback laser | Chinese Optics Letters | Vol. 13, no. 5,051401-1，2015 | Liqiang Yu, Lu Guo,Dan Lu , Chen Ji, Hao Wang, and Lingjuan Zhao | |
Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator | Chinese Physycs Letters | Vol. 32, No. 8 (2015) 084203 | HuiTao WANG, Dai-Bing ZHOU, Rui-Kang ZHANG, Dan LU, Ling-Juan ZHAO , HongLiang ZHU, Wei WANG, and Chen JI | |
Transistor Laser With a Current Confinement Aperture in the Emitter Ridge | IEEE Electron Device Letters | Vol.36, Issue: 10, 1063-1065, 2015 | Song Liang, Lijun Qiao, Liangshun Han, Junjie Xu, Hongliang Zhu, Wei Wang | |
Evaluation of growth mode and optimization of growth parameters for GaAs epitaxy in V-shaped trenches on Si | Journal of Crystal Growth | VOL. 426, 147(2015) | Shiyan Li, Xuliang Zhou, Xiangting Kong, Mengke Li, Junping Mi, Jing Bian, Wei Wang, Jiaoqing Pan | |
A Directional-Emission 1060nm GaAs-InGaAs microcylinder laser | IEEE Photonics Technology Letters | Vol.27, Issue 6, pp. 569(2015) | Mengke Li, Xuliang Zhou, Ying Ding, Weixi Chen, Hongyan Yu, Qiang Kan,Shiyan Li, Junping Mi, Wei Wang, and Jiaoqing Pan | |
Two-mode de/multiplexer based on multimode interference couplers with a tilted joint as phase shifter | Optics Letters | Vol.40, Issue 4, pp. 518-521 (2015) | Liangshun Han, Song Liang,* Hongliang Zhu, Lijun Qiao, Junjie Xu, and Wei Wang | |
Fabrication of Low-cost Multi-wavelength Laser Arrays for OLTs in WDM-PONs by Combining the SAG and BIG Techniques | IEEE Photonics Journal | Vol.7, Issue 4, pp. 1502807 (2015) | Liangshun Han, Song Liang, Huitao Wang, Junjie Xu, Lijun Qiao, Hongliang Zhu, and Wei Wang | |
A High Extinction Ratio Polarization Beam Splitter With MMI Couplers on InP Substrate | IEEE Photonics Technology Letters | Vol.27, Issue 7, pp. 782-785 (2015) | Liangshun Han, Song Liang, Hongliang Zhu, Can Zhang, and Wei Wang | |
Fabrication of an electro- absorption modulated distributed feedback laser by quantum well intermixing with an etching ion-implantation buffer layer | Chinese Optics Letters | Vol.13, Issue 8, pp. 081301 (2015) | Liangshun Han, Song Liang, Hongliang Zhu, and Wei Wang | |
Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping | Chinese Physics Letters | VOL. 23, No. 2,028101(2015) | Shi-Yan LI, Xu-Liang ZHOU, Xiang-Ting KONG, Meng-Ke LI,I Jun-Ping M,Jing BIAN, Wei WANG, and Jiao-Qing PAN | |
Continuous-wave operation up to 20°C of deep ridge npn-InGaAsP /InP multiple quantum well transistor laser emitting at 1.5-μm wavelength | Optics express | 2015, Vol. 23, No. 9 11388-93 | Lijiun Qiao, Song Liang, Liangshun Han, Junjie Xu, Hongliang Zhu, and Wei Wang | |
High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio on/off Grown on Semi-insulating GaAs Substrates by MOCVD | Chinese Physics Letters | Vol. 32, No. 3 (2015) 037301 | KONG Xiang-Ting, ZHOU Xu-Liang, LI Shi-Yan, QIAO Li-Jun, LIU Hong-Gang, WANG Wei, PAN Jiao-Qing | |
1.8-μm distributed Bragg reflector laser with 10 nm wavelength tuning range | Chinese Optics Letters | 2015,13(4),041401-41404 | Junping Mi, Hongyan Yu, Lijun Yuan,Shiyan Li, Mengke Li, Song Liang, Qiang Kan, and Jiaoqing Pan | |
Modeling and Experiment Verification of Lateral Current Spreading Effect in Ridge Waveguide Electroabsorption Modulators | IEEE Transactions On Electron Devices | VOL. 62, NO. 11, NOVEMBER 2015 | Huitao Wang, Dan Lu, Hao Wang, Fei Guo, Songtao Liu, Daibing Zhou, Hongliang Zhu, Wei Wang, Yongguang Huang, Ruikang Zhang, and Chen Ji | |
Tunable photonic microwave generation by directly modulating a dual-wavelength amplified feedback laser | Optics. Communication | vol. 345, pp. 57–61, 2015. | Liqiang Yu,Dan Lu,Yu Sun and Lingjuan Zhao | |
Widely Tunable Amplified Feedback Laser with Beating-Frequency Covering 60-GHz Band | IEEE Photonics Technology Letters | VOL. 27, NO. 19,2103(2015) | Biwei Pan, Dan Lu, Limeng Zhang, and Lingjuan Zhao | |
Broadband Chaos Generation Using Monolithic Dual-mode Laser with Optical Feedback | IEEE Photonics Technology Letters | VOL. 27, NO. 23, 2516(2015) | Biwei Pan, Dan Lu, Limeng Zhang, and Lingjuan Zhao | |
A Widely Tunable Optoelectronic Oscillator Based on Direct Modulated Dual-mode Laser | IEEE Photonics Journal | VOL. 27, NO. 23, 2516(2015) | Biwei Pan, Dan Lu, Limeng Zhang, and Lingjuan Zhao | |
Frequency-tunable optoelectronic oscillator using a dual-mode amplified feedback laser as an electrically controlled active microwave photonic filter | Optics Letters | vol. 40, no. 18, p. 4340, Sep. 2015. | Dan Lu, Biwei Pan, Haibo Chen, and Lingjuan Zhao | |
A GaAs-based Hybrid Integration of a Tunneling Diode and a 1060-nm Semiconductor Laser | IEEE Photonics Technology Letters | Vol.27, Issue 2, pp. 169(2015) | Junping Mi, Hongyan Yu, Huolei Wang, Shaoyang Tan, Weixi Chen, Ying Ding, and Jiaoqing Pan | |
High-Mobility In0.23Ga0.77As Channel MOSFETs Grown on Ge/Si Virtual Substrate by MOCVD | IEEE Transactions on Electron Devices | VOL. 62, NO. 5, MAY 2015 | Xiangting Kong, Xuliang Zhou, Shiyan Li, Hudong Chang, Honggang Liu, Jing Wang,Renrong Liang, Wei Wang, and Jiaoqing Pan | |
20-kHz Narrow linewidthFiber Bragg Grating External Cavity Semiconductor Laser; | 中国激光 | VOL. 42, NO. 5,0502007(2015) | Biwei Pan, Liqiang Yu, Dan Lu, Linsen Li, Limeng Zhang, Zhaosong Li, Hui Su, Lingjuan Zhao. | |
InP基少模半导体激光器 | 光子学报 | VOL. 35, s206001(2015) | 张莉萌，陆丹，余力强，潘碧玮，赵玲娟 | |
Narrow-Linewidth Laser and Photonic Microwave Generation using a Monolithic Integrated Amplified Feedback Laser with Delayed Optical Feedback | 光子学报 | VOL. 9,s2000(2015) | Biwei Pan, Liqiang Yu, Dan Lu, Limeng Zhang, Lingjuan Zhao. | |
基于BPM算法的平衡探测器外延结构设计讨论 | 材料工程 | No.7, 1(2015) | 张莉萌，孙思维，潘碧玮，梁松，陆丹，赵玲娟 | |
Synthesis of large-sized single crystal hexagonal boron nitride domains on nickel foils by ion beam sputtering deposition | Adv. Mater. | 27, 8109-8115 | H. L. Wang, X. W. Zhang, H. Liu, Z. G. Yin, J. H. Meng, J. Xia, X. M. Meng, J. L. Wu and J. B. You | |
Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition | Small | 11, 1542-1547 | H. L. Wang, X. W. Zhang*, J. H. Meng, Z. G. Yin, X. Liu, Y. J. Zhao, and L. Q. Zhang | |
Highly efficient and stable planar heterojunction perovskite solar cells via low temperature solution process | J. Mater. Chem. A | 3, 12133-12138 | L. Q. Zhang, X. W. Zhang*, Z. G. Yin, Q. Jiang, J. H. Meng, Y. J. Zhao, X. Liu, and H. L. Wang | |
Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition | Nanoscale | 7, 16046-16053 | J. H. Meng, X. W. Zhang*, H. L. Wang, X. B. Ren, C. H. Jin, Z. G. Yin, X. Liu, and H. Liu | |
Enhanced efficiency in polymer solar cells via hydrogen plasma treatment of ZnO electron transport layers | J. Mater. Chem. A | 3, 3719-3725 | H. L. Gao, X. W. Zhang*, J. H. Meng, Z. G. Yin, L. Q. Zhang, J. L. Wu, and X. Liu | |
Formation and local conduction of nanopits in BiFeO3 epitaxial films | J. Mater. Chem. C | 3, 11250-11256 | Y. J. Zhao, Z. G. Yin*, X. W. Zhang*, Z. Fu, and J. L. Wu | |
High efficiency Schottky junction solar cells by co-doping of graphene with gold nanoparticles and nitric acid | Appl. Phys. Lett. | 106, 233901 | X. Liu, X. W. Zhang, J. H. Meng, Z. G. Yin, L. Q. Zhang, H. L. Wang, and J. L. Wu | |
Effects of phase separation of photoactive layer on the performance of polymer solar cells | Thin Solid Film | 576, 81-87 | H. L. Gao, X. W. Zhang*, J. H. Meng, Z. G. Yin, J. L. Wu, and X. Liu | |
Plasmonic coupling between graphene and localized surface plasmons of ordered and size-tunable Au nanostructures | Nanoscale Research Lett. | 10, 390 | S. G. Zhang*, X. W. Zhang, and X. Liu | |
Self-templating noncatalyzed synthesis of monolithic boron nitride nanowires | RSC Adv. | 5, 75810-75816 | R. Z. Wang*, C. H. Su, Y. F. Zhang, X. W. Zhang, and H. Yan | |
Advantages of InGaN Light Emitting Diodes With Alternating Quantum Barriers | Journal of Display Technology | 2015. 11(5): p. 456-460 | 杨玉珏 | |
Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes | Journal of Applied Physics | 2015. 117(3):035705 | 杨玉珏 | |
Efficiency Droop Reduction in InGaN LEDs by Alternating AlGaN Barriers With GaN Barriers | Ieee Photonics Technology Letters | 2015. 27(8): p. 844-847 | 杨玉珏 | |
Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition | Physica Status Solidi a-Applications and Materials Science | 2015. 212(8): p. 1805-1809 | 杨玉珏 | |
Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates | Applied Surface Science | 2015. 353: p. 744-749 | 闫果果 | |
Specific detection of mercury(II) irons using AlGaAs/InGaAs high electron mobility transistors | Journal of Crystal Growth | 2015. 425: p. 381-384 | 王成艳 | |
Transient current response characteristics in MoO3-based organic light-emitting diodes | Journal of Physical Chemistry C | 2015, 119(19):10526-10531 | 牛立涛 | |
Overshoot effect and inflexion characteristics in transient electroluminescence of hybrid phosphorescent OLEDs | Journal of Physics D-Applied Physics | 2015, 48(5):055103 | 牛立涛 | |
Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth | Nanomaterials | 2015. 5(3): p. 1532-1543 | 刘兴昉 | |
Structural, Raman scattering and magnetic characteristics of Er+-implanted GaN thin films | Journal of Alloys and Compounds | 2015. 618: p. 533-536 | 刘超 | |
Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy | Materials Science in Semiconductor Processing | 2015. 29: p. 351-356 | Linen Zhang | |
Colossal magnetic moment in Cr and Er co-implanted GaN films | Journal of Alloys and Compounds | 2015. 644: p. 694-697 | Xingguo Gao | |
有机电致发光器件的瞬态电响应特性研究 | 发光学报 | 2015, 36(6): 699-704 | 牛立涛 | |
A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor | CHIN. PHYS. LETT. | Vol. 32, No. 5 (2015) 058501 | 催磊 | |
Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors | CHIN. PHYS. LETT. | Vol. 32, No. 12 (2015) 127301 | 闫俊达 | |
Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes | Phys. Status Solidi A | 212, No. 5, 1158–1161/ DOI 10.1002/pssa.201431719 | 康贺 | |
InxGa1-xN/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77% | CHIN. PHYS. LETT. | Vol. 32, No. 8 (2015) 088401 | 刘侍明 | |
Improved surface and electrical properties of passivated GaSb with lessalkaline sulfi de solution | Materials Science in Semiconductor Processing | 40 (2015) 685–689 | Dongyan Tao, Yu Cheng, Jingming Liu, Jie Su, Tong Liu, Fengyun Yang, Fenghua Wang,Youwen Zhao | |
C H complex defects and their influence in ZnO single crystal | Chinese Physics B | Vol. 24, No. 10 (2015) 107704 | Xie Hui, Zhao You-Wen, Liu Tong, Dong Zhi-Yuan, Yang Jun, and Liu Jing-Ming | |
Implantation induced defects and electrical properties of Sb-implanted ZnO | SCIENCE CHINA Technological Sciences | Vol.58 No.8: 1333–1338 | XIE Hui*, LIU Tong, LIU JingMing, CAO KeWei, DONG ZhiYuan,YANG Jun & ZHAO YouWen | |
Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays | Nanoscale | 7, 16481 | Huijie Li, Guijuan Zhao, Susu Kong, Dongyue Han, Hongyuan Wei, Lianshan Wang, Zhen Chen and Shaoyan Yang | |
Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures | Physica E: Low-dimensional Systems and Nano- structures | 66,116 | HuijieLi, GuipengLiu, GuijuanZhao, HongyuanWei, LianshanWang, ShaoyanYang, Zhen Chen, ZhanguoWang | |
Effect of the thickness of InGaN interlayer on the a-plane GaNepilayer | CHINESE PHYSICS B | 24,066802 | Wang Jian-Xia, Wang Lian-Shan, Zhang Qian，Meng Xiang-Yue, Yang Shao-Yan, Zhao Gui-Juan , Li Hui-Jie, Wei Hong-Yuan and Wang Zhan-Guo | |
Coupled ridge waveguide distributed feedback quantum cascade laser arrays | Appl. Phys. Lett. | Y. H. Liu, J. C. Zhang, F. L. Yan, F. Q. Liu, N. Zhuo, L.J. Wang, J. Q.Liu and Zhan-Guo Wang, | ||
Small divergence substrate emitting quantum cascade laser by subwavelength metallic grating | Optics Express | vol. 23, No. 9, pp. 11462-11469 | D. Y. Yao, J. C. Zhang, Y. H. Liu, N. Zhuo, Z. W. Jia, F. Q. Liu and Z. G. Wang, | |
10-W pulsed operation of substrate emitting photonic-crystal quantum cascade laser with very small divergence | Nanoscale Research Letters | vol. 10, No. 177, pp. 1-6 | D. Y. Yao, J. C. Zhang, O. Cathabard, S. Q. Zhai, Y. H. Liu, Z. W. Jia, F. Q. Liu and Z. G. Wang | |
Sample Grating Distributed Feedback Quantum Cascade Laser Array | Nanoscale Research Letters | vol. 10, No. 406, pp. 1-6 | F. L. Yan, J. C. Zhang, D. Y. Yao, F. L. Yan, F. Q. Liu, L. J. Wang, J. Q. Liu and Z. G. Wang | |
Top Grating, Surface-Emitting DFB Quantum Cascade Lasers in Continuous-Wave Operation | IEEE Photon. Technol. Lett | Vol. 27, No. 17, pp.1829-1832 | Y. H. Liu, J. C. Zhang, Z. W. Jia, D. Y. Yao, F. Q. Liu, S. Q. Zhai, N. Zhuo and Z. G. Wang | |
Development of Low Power Consumption DFB Quantum Cascade Lasers | IEEE Photon. Technol. Lett | Vol.27, No. 22, pp.2335-2338 | Y. H. Liu, J. C. Zhang, Z. W. Jia, D. Y. Yao, F. Q. Liu, L.J. Wang, J. Q.Liu and Z. G. Wang | |
High-Power Single-Mode Tapered Terahertz Quantum Cascade Lasers | IEEE Photon. Technol. Lett | Vol. 27, No. 14, pp.1492-1494 | T. Wang, J. Q. Liu, F. Q. Liu, L. J. Wang, J. C. Zhang and Z. G. Wang | |
Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice | APPLIED PHYSICS LETTERS | Vol. 106, No. 19, 192402 | Yuan Li, Yu Liu, Laipan Zhu, Xudong Qin, Qing Wu, Wei Huang, Zhichuan Niu, Wei Xiang, Hongyue Hao, and Yonghai Chen | |
Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells | JOURNAL OF APPLIED PHYSICS | Vol. 117, No. 01, 015302 | J. L. Yu, S. Y. Cheng, Y. F. Lai, Q. Zheng, Y. H. Chen, and C. G. Tang | |
Epitaxial properties of ZnO thin films on LaAlO3 substrates by pulsed laser deposition | Journal of Crystal Growth | Vol. 421, pp. 19–22 | C.H. Jia, S. Wang, Y.H. Wu, Y.H. Chen, X.W. Sun, W.F. Zhang | |
Narrow-line self-assembled GaAs quantum dots for plasmonics | APPLIED PHYSICS LETTERS | Vol. 106, No. 10, 101110 | Hongyi Zhang, Yongheng Huo, Klas Lindfors, Yonghai Chen, Oliver G. Schmidt, Armando Rastelli, and Markus Lippitz | |
Generation of Rashba Spin?Orbit Coupling in CdSe Nanowire by Ionic Liquid Gate | Nano Letters | Vol. 15, pp. 1152?1157 | Shan Zhang, Ning Tang, Weifeng Jin,Junxi Duan, Xin He,Xin Rong, Chenguang He,Lisheng Zhang, Xudong Qin,Lun Dai,Yonghai Chen, Weikun Ge, and Bo Shen | |
Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells | Scientific Reports | Vol. 5, 14386 | X. Rong, X. Q. Wang, G. Chen, X. T. Zheng, P. Wang, F. J. Xu, Z. X. Qin, N. Tang, Y. H. Chen, L. W. Sang, M. Sumiya, W. K. Ge， B. Shen | |
Intersubband Transition in GaN/InGaN Multiple Quantum Wells | Scientific Reports | Vol. 5, 11485 | G. Chen, X.Q. Wang, X. Rong, P. Wang, F.J. Xu, N. Tang, Z.X. Qin, Y.H. Chen，B. Shen | |
Temperature-dependent photoluminescence and Raman investigation of Cu-incorporated ZnO nanorods | Journal of Luminescence | Vol. 161, pp. 330–334 | J.L. Yu，Y.F. Lai, S.Y. Cheng, Q. Zheng, Y.H. Chen | |
Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector | Appl. Phys. Lett. | Vol.106, No. 26, 263502 | J.L. Huang, W.Q. Ma, Y.H. Zhang, et al., | |
Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate | Appl. Phys. Lett. | Vol. 107, No. 04, 041103 | K. Liu, J.L. Huang, W.Q. Ma, Y.H. Zhang, et al., | |
Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal | Solid State Communications | Vol. 224, 34 | J.L. Huang, W.Q. Ma, Y.H. Zhang, et al., | |
Narrow-band Type II Superlattice Photodetector with Detection Wavelength Shorter than 2 um | IEEE Photo. Technol. Lett | Vol. 27, 2276 | J.L. Huang, W.Q. Ma, Y.H. Zhang, et al., | |
Shifting the light emitting component from core to shell: an effective approach to improve the efficiency of light-emitting diodes based on multi-junction quantum materials | Nanoscale | Vol. 7, No. 41, pp. 17283-17288 | Yanpei Li? Kong Liu?, Shudi Lu, Shizhong Yue, Dan Chi, Zhijie Wang*, Shengchun Qu* and Zhanguo Wang | |
Constructing bulk heterojunction with componential gradient for enhancing the efficiency of polymer solar cells | Journal of Power Sources | Vol. 300, pp. 238-244 | Shudi Lu, Kong Liu, Dan Chi, Shizhong Yue, Yanpei Li, Yanlei Kou, Xuechun Lin, Zhijie Wang*, Shengchun Qu*, Zhanguo Wang | |
Fully understanding the positive roles of plasmonic nanoparticles in ameliorating the efficiency of organic solar cells | Nanoscale | Vol. 7, No. 37, pp. 15251-15257 | Dan Chi, Shudi Lu, Rui Xu, Kong Liu, Dawei Cao, Liaoyong Wen, Yan Mi, Zhijie Wang*, Yong Lei *, Shengchun Qu* and Zhanguo Wang | |
Constructing a AZO/TiO 2 Core/Shell Nanocone Array with Uniformly Dispersed Au NPs for Enhancing Photoelectrochemical Water Splitting | Advanced Energy Materials | DOI: 10.1002/aenm. 201501496 | Yan Mi, Liaoyong Wen, Rui Xu, Zhijie Wang, Dawei Cao, Yaoguo Fang, and Yong Lei* | |
Optical and electrical properties of textured sulfur-hyperdoped silicon: a thermal annealing study | Journal of Materials Science | Vol. 50, No. 9, pp. 3391-3398 | Ke-Fan Wang, Pingan Liu, Shengchun Qu, Yuanxu Wang, Zhanguo Wang | |
Modified synthesis of FeS2 quantum dots for hybrid bulk-heterojunction solar cells | Materials Letters | Vol. 157, pp. 235-238 | Ping Yua, Shengchun Qu, Caihong Jia, Kong Liu, Furui Tan | |
Possible atomic structures responsible for the sub-bandgap absorption of chalcogen hyper doped | Applied Physics Letters | Vol. 107, No. 11, 112106 | Ke-Fan Wang, Hezhu Shao Kong Liu, Shengchun Qu,Yuanxu Wang and Zhanguo Wang | |
Dimensional Dependence of the Optical Absorption Band Edge of TiO2 Nanotube Arrays beyond the Quantum Effect | Journal of Physical Chemistry C | Vol. 119, pp. 16331–16337 | Zhijie Wang, Rui Xu, Haoyuan Qi, Ranjith Vellacheri, Ute Kaiser，and Yong Lei* | |
Hybrid silicon nanocone–polymer solar cells based on a transparent top electrode | RSC Advances | Vol. 5, No. 53, pp. 42341-42345 | Yanlei Kou, Kong Liu, Zhijie Wang*, Dan Chi, Shudi Lu, Shizhong Yue, Yanpei Li, Shengchun Qu* and Zhanguo Wang | |
Ultra-low mass loading of platinum nanoparticles on bacterialcellulose derived carbon nanofibers for efficient hydrogen evolution | Catalysis Today | doi:10.1016/j. cattod. 2015.08.019 | Yan Mi, Liaoyong Wen, Zhijie Wang, Dawei Cao, Huaping Zhao, Yilong Zhou, Fabian Grote, Yong Lei* | |
Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate | Crystal Growth & Design | 15卷、5期、2413至2418页 | 杜文娜等 | |
Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 mu | Optics Express | 23卷,14期 18493-18500 | 高凤等 | |
Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation | Aip Advances | 5卷10期, 7115-7120 | 吕尊仁等 | |
Enhanced performance of tunable external-cavity 1.5 mu m InAs/InP quantum dot lasers using facet coating | Applied Optics | 54卷、3期、472至476页 | 高凤等 | |
High performance 2150 nm-emitting InAs/InGaAs/ InP quantum well lasers grown by metalorganic vapor phase epitaxy | Optics Express | 23卷7期,8382至8388 | 罗帅等 | |
Study on the response of InAs nanowire transistors to H2O and NO2 | Sensors and Actuators B | 209卷、456至461页 | 王小耶等 | |
Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence | Applied Physics Letters | 106卷10期,103104-103108 | 季海铭等 | |
Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays | Nanotechnology | 26卷、26期、265302至265311页 | 王小耶等 | |
Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates | JOURNAL OF CRYSTAL GROWTH | 426卷、15期、287至292页 | 王小耶等 | |
Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy | Frontiers of Physics | Vol. 10, 108101 | Ju Wu, Peng Jin |