序号 | 论文名称 | 刊物名称 | 论文所在期刊的卷、期、页 | 论文作者 |
| Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles | Appl. Phys. Lett. | 105, 183901 | X. Liu, X. W. Zhang, Z. G. Yin, J. H. Meng, H. L. Gao, L. Q. Zhang, Y. J. Zhao,and H. L. Wang |
| One-step synthesis of graphene-Au nanoparticle hybrid materials from metal salt loaded micelles | Nanotechnology | 25, 365602 | X. Liu, X. W. Zhang, J. H. Meng, H. L. Wang, Z. G. Yin, J. L. Wu, and H. L. Gao |
| Plasmonic coupling between graphene and localized surface plasmons of silver nanoparticles | Appl. Phys. Lett. | 104, 121109 | S. G. Zhang, X. W. Zhang, X. Liu, Z. G. Yin, H. L. Wang, H. L. Gao, and Y. J. Zhao |
| Heteroepitaxy of tetragonal BiFeO3 on hexagonal sapphire(0001) | ACS Appl. Mater. Interfaces | 6, 2639-2646 | Y. J. Zhao, Z. G. Yin, X. W. Zhang, Z. Fu, B. J. Sun, J. X. Wang, and J. L. Wu |
| Tetragonal-tetragonal-monoclinic-rhombohedral transition: strain relaxation of heavily compressed BiFeO3 epitaxial thin films | Appl. Phys. Lett. | 104, 052908 | Z. Fu, Z. G. Yin*, N. F. Chen, X. W. Zhang, Y. J. Zhao, Y. M. Bai, Y. Chen, H.H.Wang, X. L. Zhang, and J. L. Wu |
| Electrical properties of sulfur-implanted cubic boron nitride thin films | Chin. Sci. Bull. | 59, 1280-1284 | X. W. Zhang, Z. G. Yin, F. T. Si, H. L. Gao, X. Liu, and X. L. Zhang |
| Plasmon-enhanced ultraviolet photoluminescence from highly ordered ZnO nanorods/graphene hybrid structure decorated with Au nanospheres | J. Phys. D: Appl. Phys. | 47, 495103 | S. G. Zhang*, L. Wen, J. L. Li, F. L. Gao, X. W. Zhang, L. H. Li, and G. Q. Li |
| Space program SJ-10 of microgravity research | Microgravity Sci. Technol. | 26, 159-169 | W. R. Hu, J. F. Zhao, M. Long, X. W. Zhang, Q. S. Liu, M. Y. Hou, Q. Kang, Y. R.Wang, S. H. Xu, W. J. Kong, H. Zhang, S. F.Wang, Y. Q. Sun, H. Y. Hang, Y. P. Huang, W. M. Cai, Y. Zhao, J. W. Dai, H. Q. Zheng, E. K. Duan, and J. F. Wang |
| Self-assembly epitaxial growth of nanorods on nanowalls in hierarchical ZnO hexagonal nanocastle | J. Nanopart. Res. | 16, 2142 | C. L. Chen, T. Yan, M. M.C. Chou, C.-Y. Lee, B.-M. Wang, M.-J. Wen, and X. W. Zhang |
| Multichannel DFB Laser Arrays Fabricated by Upper SCH Layer SAG Technique | IEEE Journal of Quantum Electronics | vol.50, no. 2,p. 92–97, Feb. 2014. | 张灿 |
| Simulation and experimental characterization of a dual- mode two-section amplified feedback laser with mode separation over 100 GHz | Chinese Optics Letters | Vol. 12, Issue 11, pp. 110605- (2014) | 潘碧玮 |
| Tunable optical microwave generation using self-injection locked monolithic dual-wavelength amplified feedback laser | Optics Letters | Vol. 39, Issue 22, pp. 6395-6398 | 潘碧玮 |
| Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth
Temperature of Buffer Layer | Chinese Physics Letters | Vol.31, Issue 12, pp. 128101 | 周旭亮 |
| Ultrabroad stimulated emission from quantum well laser | Applied Physics Letters | Vol. 104, Issue: 25,P: 251101 | 王火雷 |
| Ultrashort pulse generation by semiconductor mode-locked lasers at 760 nm | Optics Express | Vol. 8, Issue: 9, Pages: 675-675 | 王火雷 |
| High-power InGaAs-GaAs quantum-well laser with enhanced broad spectrum of stimulated emission | Applied Physics Letters | Vol.105, Issue: 14, P.141101 | 王火雷 |
| Monolithically Integrated Amplified Feedback Lasers for High-Quality Microwave and Broadband Chaos Generation | Journal of Lightwave Technology | vol.32, issue 20 (2014) | 余力强 |
| A Widely Tunable Directly Modulated DBR Laser With High Linearity | IEEE PHOTONICS JOURNAL | vol.6, issue 4, Pages:1501308 | 余力强 |
| Widely Tunable Optical Decision Circuit Using a Monolithically Integrated SOA-SGDBR Laser | IEEE PHOTONICS TECHNOLOGY LETTERS | vol.26, issue 7，Pages：722-725 | 余力强 |
| All-optical decision gate with extinction ratio improved scheme using a SOA-DBR laser | IEEE PHOTONICS TECHNOLOGY LETTERS | vol.26, issue 21，P：2126-2129 ,2014 | 余力强 |
| All-optical clock recovery for 40 Gbaud NRZ-QPSK signals using amplified feedback DFB laser diode | CHINESE OPTICS LETTERS | vol.12, issue 8,Pages:081402-81405 | 余力强 |
| Fabrication of widely tunable ridge waveguide DBR lasers for WDM-PON | Chinese Optics Letters | Vol.12, Issue 9, pp. 091402 | 韩良顺 |
| Electroabsorption-modulated widely tunable DBR laser transmitter for WDM-PONs | Optics Express | Vol.22, Issue 24, pp. 30368-30376 | 韩良顺 |
| Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors | Optics Express | Vol.22, Issue 2, p.1806-1814 | 霍文娟 |
| 1.3-μm multi-wavelength DFB laser array fabricated by mocvd selective area growth | Optics Communications | Vol.331, pp.165-168,(2014) | 郭菲 |
| Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate | Journal of Semiconductors | Vol.35, Issue 7, p.073002 ，2014 | 周旭亮 |
| 1.3-μm 1×4 MMI Coupler Based on Shallow-etched InP Ridge Waveguides | Journal of Semiconductors | 35, No. 2, p. 024012-1, 2014 | 郭菲 |
| Structural, surface, and electrical properties of nitrogen ion implanted ZnTe epilayers | Appl. Phys. A | 116 (2014), 193–197 | Qiumin Yang |
| Structural and magnetic properties of Er-implanted GaN films | Materials Letters | 114 (2014), 22-25 | DongyanTao |
| 硅基II-VI族单结及多结太阳电池研究进展 | 半导体技术 | 39, 2014，241-247 | 张理嫩 |
| Molecular beam epitaxial growth of AlSb/InAsSb heterostructures | Applied Surface Science | 313: p. 479-483 | 张雨溦 |
| Self-consistent analysis of InAsSb quantum-well heterostructures | Physica Status Solidi B-Basic Solid State Physics | 251(11): p. 2287-2293 | 张雨溦 |
| Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors | IEEE Electron Device Letters | 35(3): p. 333-335 | 王成艳 |
| Fast Responsive and Highly Efficient Optical Upconverter Based on Phosphorescent OLED | ACS Applied Materials & Interfaces | 2014 6 (21), p.19011-19016 | Xinbo Chu, Min Guan, LitaoNiu, YipingZeng, Yiyang Li, Yang Zhang, Zhanping Zhu,Baoqiang Wang |
| The utilization of low-temperature evaporable CsN3-doped NBphen as an alternative and efficient electron-injection layer in OLED. | Physica Status Solidi a-Applications and Materials Science | 2014. 211(7): p. 1605- 1609 | Xin Bo Chu, Min Guan, Li Tao Niu, Yang Zhang, Yi Yang Li, Xing Fang Liu, and Yi Ping Zeng |
| Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers. | Applied Physics a-Materials Science & Processing | 2014. 116(4): p. 1757- 1760 | Yu-Jue Yang and Yi-Ping Zeng |
| Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers | Physica Status Solidi a-Applications and Materials Science | 2014. 211(7): p. 1640- 1644 | Yu-Jue Yang and Yi-Ping Zeng |
| Enhancement of hole injection with Mg-Si-codoped barriers in InGaN-based light-emitting diodes | Optics Communications | 2014. 326: p. 121-125 | Yu-Jue Yang and Yi-Ping Zeng |
| Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers | Journal of Applied Physics | 2014. 115(23):p.233102 | Yujue Yang, Junxi Wang, Jinmin Li, and Yiping Zeng |
| The role played by strain on phase separation in InGaN quantum wells | Solid State Communications | 2014. 194: p. 25-29 | Yujue Yang, Ping Ma, Xuecheng Wei, and Yiping Zeng |
| Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes | Journal of Luminescence | 2014. 155: p. 238-243 | Yujue Yang, Ping Ma, Xuecheng Wei, Dan Yan, Yafang Wang, and Yiping Zeng |
| The thermal stability study and improvement of 4H-SiC ohmic contact | Applied Physics Letters | 105(12):p.122106 | Shengbei Liu |
| Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation | Journal of Applied Physics | 116, 054502 (2014); doi: 10.1063/1.4891732 | 闫俊达 |
| Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1xN/AlN) MQWs/GaN high electron mobility transistor | Journal of Alloys and Compounds | 605 (2014)： 113–117 | 李巍 |
| Effects of GaN cap layer on the reliability of AlGaN/ GaN Schottky diodes | Physica Status Solidi A | 1–4(2015) / DOI 10.1002 | 康贺 |
| High voltage AlGaN/GaN based Lateral Schottky Barrier Diodes | Chinese Phyics Letters | 31(2014): 68502 | 康贺 |
| Analysis of Transconductance Characteristic of AlGaN/ GaN HEMTs with Graded AlGaN layer | The European Physical Journal Applied Physics. | 66 (2014)： 20101 | 渠慎奇 |
| Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT | The European Physical Journal Applied Physics. | 68 (2014)： 10105 | 渠慎奇 |
| Competitive growth mechanisms of AlN on Si (111) by MOVPE | SCIENTIFIC REPORTS | 4 , 6416 | 冯玉霞 |
| Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer | CRYSTENGCOMM | 16, 7525-7528 | 冯玉霞 |
| Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy | NANOSCALE RESEARCH LETTERS | 9, 470 | 桑玲 |
| Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy | RSC ADVANCES | 4, 54902–54906 | 孔苏苏 |
| Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 29，045015 | 冯玉霞 |
| Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces | JOURNAL OF APPLIED PHYSICS | 115, 193704 | 李辉杰 |
| Anisotropic scattering effect of the inclined misfit dislocation on the two- dimensional electron gas in Al(In)GaN/GaN heterostructures | JOURNAL OF APPLIED PHYSICS | 115, 043702 | 金东东 |
| Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates | JOURNAL OF CRYSTAL GROWTH | 389，1–4 | 李辉杰 |
| Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 251(4), 788–791 | 李辉杰 |
| Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer | CHINESE PHYSICS B | 23(2), 026801 | 王建霞 |
| Mobility limited by cluster scattering in ternary alloy quantum wires | CHINESE PHYSICS B | 23（1 ），017305 | 张恒 |
| Directional collimation of substrate emitting quantum cascade laser by nanopores arrays | Appl. Phys. Lett. | vol. 104(5), p.05210 9-1–052109-5 | 张锦川 |
| 1.8W room temperature pulsed operation of substrate-emitting quantum cascade lasers | IEEE Photon. Technol. Lett. | vol. 26(4), 323-325 | 姚丹阳 |
| Multi-wavelength surface emitting quantum cascade laser based on equivalent phase shift | Journal of Applied Physics | vol. 115(3), pp.033106-1–033106-4 | 张锦川 |
| Complex-coupled edge-emitting photonic crystal distributed feedback quantum cascade lasers a t λ ~ 7.6 μm | Solid-State Electronics | Vol. 94 (2), p.20-22. | 张锦川 |
| Study on the thermal imaging application of quantum cascade detectors | Infrared Physics & Technology | vol. 63 (1), p.17-21 | 翟慎强 |
| Quantum dot quantum cascade infrared photodetector | Appl. Phys. Lett. | vol. 104 (17), pp.171108-1–171108-5. | 王雪娇 |
| Quantum dot cascade laser | Nanoscale Research Letters | vol. 9(144), pp. 1-7 | 卓宁 |
| Tri-channel single-mode terahertz quantum cascade laser | Opt.Lett. | vol. 39(23), pp. 6612-6614 | 王涛 |
| Confined and Interface Phonons in Chirped GaAs-AlGaAs Superlattices | Chinese phys. Lett. | vol. 31(6), pp.064211-1–064211-4. | 胡永正 |
| Index-coupled multi-wavelength distributed feedback quantum cascade lasers based on sampled gratings. | Opt. Quant. Electron. | vol. 46, pp. 1539- 1546 | 谭松 |
| Microscopic reflection difference spectroscopy for strain field of GaN induced by Berkovich nanoindentation | APPLIED PHYSICS LETTERS | 104, 053106 | H. S. Gao, Y. Liu, H. Y. Zhang, S. J. Wu, C. Y. Jiang, J. L. Yu, L. P. Zhu, Y. Li, W. Huang, and Y. H. Chen |
| Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells | JOURNAL OF APPLIED PHYSICS | 115, 083509 | L. P. Zhu, Y. Liu, C. Y. Jiang, X. D. Qin, Y. Li, H. S. Gao, and Y. H. Chen |
| Effective period potential in a hybrid mesoscopic ring with Rashba spin–orbit interaction | Physics Letters A | 378 584–589 | YuLiu,YonghaiChen,ChiyunWang,ZhanguoWang |
| Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well | Nanoscale Research Letters | 9，493 | Laipan Zhu, Yu Liu, Hansong Gao, Xudong Qin, Yuan Li, Qing Wu and Yonghai Chen |
| Observation of linear and quadratic magnetic field dependence of magneto-photocurrents in InAs/GaSb superlattice | Nanoscale Research Letters | 9，279 | Yuan Li, Yu Liu, Chongyun Jiang, Laipan Zhu, Xudong Qin, Hansong Gao, Wenquan Ma, Xiaolu Guo, Yanhua Zhang and Yonghai Chen |
| Spin depolarization under low electric fields at low temperatures in undoped InGaAs/AlGaAs multiple quantum well | APPLIED PHYSICS LETTERS | 105, 152103 | Laipan Zhu, Yu Liu, Chongyun Jiang, Jinling Yu, Hansong Gao, Hui Ma, Xudong Qin, Yuan Li, Qing Wu, and Yonghai Chen |
| Origin of attendant phenomena of bipolar resistive switching and negative differential resistance in SrTiO3:Nb/ZnO heterojunctions | APPLIED PHYSICS LETTERS | 104, 043501 | C. H. Jia, X. W. Sun, G. Q. Li, Y. H. Chen, and W. F. Zhang |
| Spin transport study in a Rashba spin-orbit coupling system | SCIENTIFIC REPORTS | 4，4030 | Fuhong Mei, Shan Zhang, Ning Tang, Junxi Duan, Fujun Xu, Yonghai Chen, Weikun Ge & Bo Shen |
| Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid | SCIENTIFIC REPORTS | 4，4889 | Junxi Duan, Ning Tang, Xin He, Yuan Yan, Shan Zhang, Xudong Qin, Xinqiang Wang, Xuelin Yang, Fujun Xu, Yonghai Chen, Weikun Ge & Bo Shen |
| Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells | NANOSCALE RESEARCH LETTERS | 9，130 | Jinling Yu, Shuying Cheng, Yunfeng Lai, Qiao Zheng and Yonghai Chen |
| Ferroelectric memristive effect in BaTiO3 epitaxial thin films | JOURNAL OF PHYSICS D-APPLIED PHYSICS | 47，365102 | X Chen, C H Jia, Y H Chen, G Yang and W F Zhang |
| Negative differential resistance and resistance switching behaviors in BaTiO3 thin films | JOURNAL OF APPLIED PHYSICS | 115, 204515 | G. Yang, C. H. Jia, Y. H. Chen, X. Chen, and W. F. Zhang |
| Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire | Journal of Crystal Growth | 391，111 | H.T.Wang, C.H.Jia, J.K.Xu, Y.H.Chen, X.W.Chen, W.F.Zhang |
| Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy | JOURNAL OF PHYSICS D-APPLIED PHYSICS | 47，125303 | X W Chen, C H Jia, Y H Chen, H T Wang and W F Zhang |
| Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence | Chinese Physics B | Vol. 23, No. 2 (2014) 027304 | Zhang Jie(章杰), Yu Jin-Ling(俞金玲), Cheng Shu-Ying(程树英), Lai Yun-Feng(赖云锋), and Chen Yong-Hai(陈涌海) |
| Polarized Raman scattering of single ZnO nanorod | JOURNAL OF APPLIED PHYSICS | 115, 033505 | J. L. Yu, Y. F. Lai, Y. Z. Wang, S. Y. Cheng, and Y. H. Chen |
| Spin-orbit coupling effects on the in-plane optical anisotropy of semiconductor quantum wells | Chinese Physics B | Vol. 23, No. 1 (2014) 017806 | Yu Jin-Ling(俞金玲), Chen Yong-Hai(陈涌海), Lai Yun-Feng(赖云锋), and Cheng Shu-Ying(程树英) |
| Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods | Applied Physics Letters | v.105, 012404 (2014) | P. Barate, S. Liang, T. T. Zhang, J. Frougier, M. Vidal, P. Renucci, X. Devaux, B. Xu, H. Jaffrès, J. M. George, X. Marie, M. Hehn, S. Mangin, Y. Zheng, T. Amand, B. Tao, X. F. Han, Z. Wang, and Y. Lu |
| Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector | Physical Review B | v.90, 085310 (2014) | S. H. Liang, T. T. Zhang, P. Barate, J. Frougier, M. Vidal, P. Renucci, B. Xu, H. Jaffrès, J.-M. George, X. Devaux, M. Hehn, X. Marie, S. Mangin, H. X. Yang, A. Hallal, M. Chshiev, T. Amand, H. F. Liu, D. P. Liu, X. F. Han, Z. G. Wang, and Y. Lu |
| Effect of high temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition | Chinese Physics B | 23(8) 087810 (2014) | Wang Wei-Ying, Jin Peng, Liu Gui-Peng, Li Wei, Liu Bin, Liu Xing-Fang, Wang Zhan-Guo |
| Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quanum wells | Chinese Physics B | 23(11), 117803 (2014) | Wang Wei-Ying, Liu Gui-Peng, Jin Peng, Mao De-Feng, Li Wei, Wang Zhan-Guo |
| Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys | Journal of Semiconductors | 35 (9), 093001 (2014) | Li Wei, Jin Peng, Wang Weiying, Mao Defeng, Liu Guipeng, Wang Zhanguo, Wang Jiaming, Xu Fujun, and Shen Bo |
| AlGaN合金中局域态和极化电场的竞争机制 | 发光学报 | 第35卷，第7期，761 | 毛德丰， 金鹏，李维，刘贵鹏，王维颖，王占国 |
| Evidence of Type-Ⅱ Band Alignment in Ⅲ-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures | Scientific Reports | 4,6525 | Jiaming Wang, Fujun Xu, Xia Zhang, Wei An, Xin-Zheng Li, Jie Song, Weikun Ge, Guangshan Tian, Jing Lu, Xinqiang Wang, Ning Tang, Zhijiang Yang, Wei Li, Weiying Wang, Peng Jin, Yonghai Chen, Bo Shen |
| Luminescence of La0.2Y1.8O3 nanostructured scintillators | Optics Letters | Vol 39, 5705-5708 | Wei Chen, Haiqing Tu, Sunil Sahi, Defeng Mao, Rasool Kenarangui, Junming Luo, Peng Jin, Shuman Liu, Lun Ma, Andrew Brandt, Alex Weiss |
