序号 | 论文题目 | 期刊名称及页码 | 作者 | 通讯作者 | 影响因子 |
1 | Doping and electrical properties of cubic boron nitride thin films: A critical review | Thin Solid Films 544, 2-12 | 张兴旺 | 张兴旺 | 1.604 |
2 | Efficiency enhancement of polymer solar cells by localized surface plasmon of Au nanoparticles | J. Appl. Phys. 114, 163102 | 高红丽 | 张兴旺 | 2.21 |
3 | Polystyrene-microsphere-assisted patterning of ZnO nanostructu res: growth and characterization | J. Nanosci. Nanotechnol. 13, 1101-1105 | 董敬敬 | 张兴旺 | 1.149 |
4 | Controllable synthesis of ZnO nanostructures on the Si sub- strate by a hydrothermal route | Nanoscale Res. Lett. 8, 378 | 张兴旺 | 董敬敬 | 2.524 |
5 | Ag nanoparticles preparation and their light trapping performance | Sci. China Tech. Sci. 56, 109-114 | 白一鸣 | 白一鸣 | 1.187 |
6 | High Response in Tellurium-Super- saturated Silicon Photodiode | Chin.Phys. Lett.; Vol.30, Issue 3, pp. 036101 (2013) | 王熙元 | 黄永光 | 0.811 |
7 | Monolithically integrated 4-channel-selectable light sources fabricated by the SAG technology | IEEE Photonics Journal,Vol.5, Issue 4, pp.1400407 (2013) | 张灿 | 朱洪亮，张灿 | 2.356 |
8 | Multi-Channel DFB Laser Arrays Fabricated by SAG Technology | Optics Communication, Vol.300, pp.230-235 | 张灿 | 梁松 | 1.438 |
9 | The fabrication of 10-channel DFB Laser Array by SAG technology | Optics Communications,Vol.311, pp.6-10 (2013), | 张灿 | 梁松 | 1.438 |
10 | Tunable DFB lasers integrated with Ti thin film heaters fabricated with a simple procedure | Optics & Laser Technology,Vol.54, Issue 30, pp.148-150 (2013) | 张灿 | 张灿 | 1.365 |
11 | Widely Tunable Dual-mode DFB Laser Fabricated by SAG Technolo- gy Integrated with Ti-heaters | Optics Letters,Vol.38, Issue 16, pp.3050-3053 (2013) | 张灿 | 张灿 | 3.385 |
12 | Multi-Channel DFB Laser Array Fabricated by SAG with Optimized Epitaxy Conditions | Chinese Optics Letters,Vol.11, Issue 04, pp.041401 (2012) | 张灿 | 梁松 | 0.968 |
13 | Ultrathin Terahertz Planar Elements | Advanced Optical Materials,Volume 1, Issue 2, pages 186–191(2013) | 阚强 | 张岩 | 0 |
14 | Temperature Characteristics of Monolithically Integrated Waveleng- th-Selectable Light Sources | Chinese Physics Letters,Vol.30, Issue 10, pp.108501(2013) | 韩良顺 | 朱洪亮 | 0.811 |
15 | 1.06-μm InGaAs/GaAs multiple- quantum-well optical thyristor lasers with a PiNiN structure | Optics Letters,Vol.38, Issue 22, 4868-4871 (2013) | 王火雷 | 潘教青 | 3.385 |
16 | Generation and evolution of the terahertz vortex beam | Optics Express, Vol. 21, Issue 17, pp. 20230-20239 (2013) | 阚强 | 王新轲 | 3.546 |
17 | Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method | IEEE PHOTONICS TECHNOLOGY LETTERS,VOL. 25, Issue. 12, JUNE 15, pp.1180-1183（2013） | 袁丽君 | 袁丽君 | 2.356 |
18 | A Wavelength and Mode-Spacing Tunable Dual-Mode Distributed Bragg Reflector Laser | Photonics Technology Letters,vol. 25, no. 6, pp. 576–579, 2013 | 余力强 | 余力强 | 2.356 |
19 | Fabrication and Characterization of High Power 1064-nm DFB Lasers | Chinese Physics Letter,Vol.30, Issue 11, pp.114202 (2013) | 谭少阳 | 谭少阳 | 0.811 |
20 | InP based DFB laser array integrated with MMI coupler | Science China Technological Sciences,vol. 56, no. 3, pp. 573–578, | 朱洪亮 | 朱洪亮 | 1.187 |
21 | Direct generation of broadband chaos by a monolithic integrated semiconductor laser chip | OPTICS EXPRESS，Vol. 21, No. 20，pp.23358 | 赵玲娟 | 夏光琼 | 3.546 |
22 | Large Area Uniform Microstructures on Silicon Surface Created With a Picosecond Laser Beam Scanning | Advanced Materials Research,Vol.651, pp. 327-332 (2013) | 王熙元 | 黄永光 | 0 |
23 | Strain Distributions in Non-Polar a-Plane InxGa1-xN Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction | CHINESE PHYSICS LETTERS 卷: 30 期: 9 文献号: 098102 | 赵桂娟 | 杨少延 | 0.811 |
24 | Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 卷: 52 p150-154 | 刘长波 | 杨少延 | 1.522 |
25 | Scattering due to large cluster embedded in quantum wells | APPLIED PHYSICS LETTERS 卷: 102 期: 5 文献号: 052105 | 刘长波 | 刘长波 | 3.794 |
26 | Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field | JOURNAL OF APPL. PHYSICS 卷:113, 期: 21,文号:213711 | 金东东 | 杨少延 | 2.21 |
27 | Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well | J. OF APPLIED PHYSICS 卷: 113 期: 3 文献号: 033701 | 金东东 | 金东东 | 2.21 |
28 | Dislocation Scattering in ZnMgO/ZnO Heterostructures | IEEE TRANSACTIONS ON ELECTRON DEVICES 卷: 60 期: 6, 页: 2077-2079 | 桑玲 | 杨少延 | 2.062 |
29 | X-ray probe of GaN thin films grown on InGaN compliant substrates | APPLIED PHYSICS LETTERS 卷: 102 期: 13 文献号: 132104 | 徐小青 | 杨少延 | 3.794 |
30 | Numerical study of radial temperature distribution in the AlN sublimation growth system | Cryst. Res. Technol. 48, No. 5, 321–327 | 李辉杰 | 杨少延 | 1.12 |
31 | Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/ GaN high electron mobility transistors | APPLIED PHYSICS LETTERS 103, 232109 | 李辉杰 | 杨少延 | 3.794 |
32 | Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy | Phys. Status Solidi B, 1–4 (2013) / DOI 10.1002/pssb.201350199 | 李辉杰 | 杨少延 | 1.489 |
33 | Electron mobility limited by surface and interface roughness scattering in AlxGa1?xN/GaN quantum wells | Chin. Phys. B Vol. 22, No. 7 (2013) 077305 | 王建霞 | 杨少延 | 1.148 |
34 | ITO-free and air stable organic light-emitting diodes using MoO3: PTCDA modified Al as semitransparent anode | Rsc Advances, 9509-9513. | 楚新波 | 关敏 | 2.562 |
35 | Influences of organic-inorganic interfacial properties on the performance of a hybrid near-infrared optical upconverter | Rsc Advances, 23503-23507. | 楚新波 | 关敏 | 2.562 |
36 | Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates | Applied Surface Science, 301-306 | 董林 | 董林 | 2.112 |
37 | Characterization of Obtuse Triangular Defects on 4H-SiC 4 degrees off-Axis Epitaxial Wafers | Chinese Physics Letters, 096105 | 董林 | 董林 | 0.811 |
38 | Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces | Physica Status Solidi A2503-9. | 董林 | 孙国胜 | 1.469 |
39 | Effect of MoO3-doped PTCDA as buffer layer on the performance of CuPc/C60 solar cells. | Physica Status Solidi A1178-1182 | 关敏 | 关敏 | 1.469 |
40 | Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene-Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources | Materials, 1543-1553 | 刘兴昉 | 刘兴昉 | 2.247 |
41 | Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates | Chinese Physics B, 086802 | 刘兴昉 | 刘兴昉 | 1.148 |
42 | Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC | Journal of Applied Physics, 044112 | 张峰 | 张峰 | 2.21 |
43 | Atomic Layer Deposition of BiFeO3 Thin Films Using β-Diketonates and H2O | Journal of physical chemistry C, 24579–24585 | 张峰 | 张峰 | 4.814 |
44 | Theoretical study of transport property in InAsSb quantum well heterostructures. | Journal of Applied Physics, 153707 | 张雨溦 | 张杨 | 2.21 |
45 | Transport properties in AlInSb InAsSb heterostructures | Journal of Applied Physics, 243710 | 张雨溦 | 张杨 | 2.21 |
46 | High sensitivity Hall devices with AlSb/InAs quantum well structures. | Chinese Physics B, 057106 | 张杨 | 张杨 | 1.148 |
47 | Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001)/SiO2 interface | Applied Surface Science, 301-306 | 郑柳 | 张峰 | 2.112 |
48 | High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions | Chinese Physics B, 097302. | 郑柳 | 张峰 | 1.148 |
49 | Fast Homoepitaxial Growth of 4h-Sic Films on 4° Off-Axis Substr- ates in a SiH4+C2H4+H2 System. | Chinese Physics Letters, 128101. | 刘斌 | 刘兴昉 | 0.811 |
50 | Raman Spectra Analysis of GaN : Er Films Prepared by Ion Implantation | Spectroscopy and Spectral Analysis, 33，(2013) 699-703. | 陶东言 | 刘超 | 0.293 |
51 | Structural, morphological and magnetic characteristics of Tb-implanted GaN and AlGaN films | Materials Science and Engineering B, 178 (2013) 349-353 | 刘超 | 刘超 | 1.846 |
52 | Structural, morphological and mag- netic properties of AlGaN thin films co-implanted with Cr and Sm ions | Journal of Magnetism and Magnetic Materials, 343, (2013) 65-68 | 刘超 | 刘超 | 1.826 |
53 | Synthesis of chalcopyrite CuIn1?xGax Se2 alloys for photovoltaic applica- tion by a novel melting method | Materials Letters 106 (2013) 52–55 | 陈腾 | 陈腾 | 2.224 |
54 | Improvement of surface quality of semi-insulating InP substrate through a new etching and cleaning method | Journal of Vacuum Science and Technology A ；页码：031404 | 刘京明 | 刘京明 | 1.432 |
55 | High efficiency and high power continuous-wave semiconductor terahertz lasers at 3.1 THz | Solid-State Electronics，vol 81，68-71 | 刘俊岐 | 刘俊岐 | 1.482 |
56 | High-Power Distributed Feedback Terahertz Quantum Cascade Lasers | IEEE ELECTRON DEVICE LETTERS, vol 34, 1412 | 王涛 | 刘俊岐 | 2.789 |
57 | Continuous-Wave Operation of Terahertz Quantum Cascade Lasers at 3.2 THz | CHIN. PHYS. LETT.，vol 30,064201 | 王涛 | 刘俊岐 | 0.811 |
58 | 19μm quantum cascade infrared photodetectors | APPLIED PHYSICS LETTERS，vol 102,191120 | 翟慎强 | 刘俊岐 | 3.794 |
59 | The output power and beam divergence behaviors of tapered terahertz quantum cascade lasers | OPTICS EXPRESS，vol 21， 15998 | 刘俊岐 | 刘俊岐 | 3.546 |
60 | Monolithically integrated terahertz quantum cascade array laser | ELECTRONICS LETTERS，vol 49，1632 | 陈剑燕 | 刘俊岐 | 1.038 |
61 | High power terahertz quantum cascade laser | CHINESE OPTICS LETTERS,vol 11,S20401 | 陈剑燕 | 刘俊岐 | 0.968 |
62 | Micro-Raman study on chirped | Phys. Status Solidi A，vol 210,2364 | 胡永正 | 王利军 | 1.469 |
63 | Low-threshold, high SMSR tunable external cavity quantum cascade laser around 4.7 μm | Opt Quant Electron，vol 45, 1147 | 谭松 | 王利军 | 0.987 |
64 | High power buried sampled grating distributed feedback quantum cascade lasers | JOURNAL OF APPLIED PHYSICS，vol 113,153101 | 张锦川 | 刘峰奇 | 2.21 |
65 | High Performance Surface Grating Distributed Feedback Quantum Cascade Laser | IEEE PHOTONICS Technology Letters，vol 25, 686 | 张锦川 | 刘峰奇 | 2.038 |
66 | High temperature operation of edge-emitting photonic-crystal distributed-feedback quantum cascadelasers at λ~ 7.6 μm | Physica E，vol 48, 42 | 张锦川 | 刘峰奇 | 1.522 |
67 | Tunable Distributed Feedback Quantum Cascade Lasers by a Sampled Bragg Grating | IEEE Photonics Technology Letters，vol.25,1039 | 卓宁 | 张锦川 | 2.038 |
68 | Surface emitting quantum cascade lasers operating in continuous-wave mode above 70 °C at λ~ 4.6 μm | APPLIED PHYSICS LETTERS，vol 103,041121 | 姚丹阳 | 张锦川 | 3.794 |
69 | High efficiency beam combination of 4.6-μm quantum cascade lasers | CHINESE OPTICS LETTERS,vol 11,091401 | 王利军 | 佟存柱 | 0.987 |
70 | In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces | Nanoscale Research Letters vol.8, 298 | 武树杰 | 陈涌海 | 2.524 |
71 | Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique | APPLIED PHYSICS LETTERS 102, 232402 (2013) | 马惠 | 陈涌海 | 3.794 |
72 | Helicity dependent photocurrent enabled by unpolarized radiation in a GaAs/Al0.3Ga0.7As two-dimensional electron system | APPLIED PHYSICS LETTERS 102, 212103 (2013) | 马惠 | 陈涌海 | 3.794 |
73 | Observation of circular dichroism in (001)-oriented P-I-N InGaAs/GaAs | APPLIED PHYSICS LETTERS 102, 072404 (2013) | 俞金玲 | 陈涌海 | 3.794 |
74 | Intrinsic photoinduced anomalous Hall effect in insulating GaAs/AlGaAs quantum wells at room temperature | APPLIED PHYSICS LETTERS 102, 202408 (2013) | 俞金玲 | 陈涌海 | 3.794 |
75 | In-plane optical anisotropy induced by asymmetrically δ-doping in (001) | JOURNAL OF APPLIED PHYSICS 113, 083504 (2013) | 俞金玲 | 陈涌海 | 2.21 |
76 | Investigation anisotropic mode splitting induced by electro-optic | JOURNAL OF APPLIED PHYSICS 114, 033511 (2013) | 陈涌海(第二通讯作者) | 陈涌海(第二通讯作者) | 2.21 |
77 | Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate | NANOSCALE RESEARCH LETTERS vol.8, 27 | 李天峰 | 李天峰 | 2.524 |
78 | InAs-mediated growth of vertical InSb nanowires on Si substrates | NANOSCALE RESEARCH LETTERS vol.8, 333 | 李天峰 | 李天峰 | 2.524 |
79 | Photoluminescence properties of porous InP filled | Appl Phys A vol.111, no.3, pp695-699 | 贾彩虹 | 陈涌海 | 1.545 |
80 | Control of epitaxial relationships of ZnO/SrTiO3 | NANOSCALE RESEARCH LETTERS vol.8, 23 | 贾彩虹 | 陈涌海 | 2.524 |
81 | heterointerfaces by etching the substrate surface | JOURNAL OF APPLIED PHYSICS 113, 173508 | 张宏毅 | 陈涌海 | 2.21 |
82 | Photo-instability of CdSe/ZnS quantum dots in poly(methylmethacrylate) film | JOURNAL OF APPLIED PHYSICS 114, 244308 (2013) | 张宏毅 | 陈涌海 | 2.21 |
83 | Wetting layer evolution and its temp- erature dependence during selfas- sembly of InAs/GaAs quantum dots | Nanoscale Research Letters 7, 600 (2012) | 张宏毅 | 陈涌海 | 2.524 |
84 | Tunable Surface Electron Spin Splitting with Electric Double-Layer | Nano Lett. 2013, 13, 2024?2029 | 陈涌海 | 陈涌海 | 13.025 |
85 | Spectra of circular and linear photogalvanic effect at inter-band excitation in In0.15Ga0.85As/ Al0.3Ga0.7As multiple quantum wells | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES vol.49, 92-96 | 陈涌海 | 陈涌海 | 1.522 |
86 | Temperature dependence of anisotropic mode splitting induced by birefringence in an InGaAs/GaAs /AlGaAs vertical-cavity surface-emitting laser studied by reflectance difference spectroscopy | APPLIED OPTICS vol.52, no.5, pp1035-1040 | 陈涌海 | 陈涌海 | 1.689 |
87 | Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells | APPLIED PHYSICS LETTERS 102, 192109 (2013) | 陈涌海 | 陈涌海 | 3.794 |
88 | Anomalous circular photogalvanic effect of the spin-polarized two-dimensional electron gas in Mg0.2Zn0.8O/ZnO heterostructures | APPLIED PHYSICS LETTERS 102, 192405 (2013) | 陈涌海 | 陈涌海 | 3.794 |
89 | Cavity-Mode Calculation of L3 Photonic Crystal Slab Using the Effective Index Perturbation Method | OPTICAL REVIEW Vol.20, No.5 (2013) 420–425 | 张世著 | 张世著 | 0.702 |
90 | Fabrication of Low-Density Long-Wavelength InAs Quantum Dots using a Formation-Dissolution -Regrowth Method | CHIN. PHYS. LETT. Vol.30, No.8 (2013) 087804 | 张世著 | 叶小玲 | 0.811 |
91 | Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping | Solar Energy Materials & Solar Cells, Vol. 113 (2013) pp.144-147. | 杨晓光 | 杨晓光 | 4.63 |
92 | InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition | Chinese Physics Letters, Vol. 30, No. 6 (2013) 068101. | 罗帅 | 罗帅 | 0.811 |
93 | Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition | Journal of Crystal Growth, Vol. 375 (2013) pp. 100–103. | 罗帅 | 罗帅 | 1.552 |
94 | Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires | RSC Advances, Vol. 3 (2013) pp.19834-19839. | 王小耶 | 杨涛 | 2.562 |
95 | Anisotropic characteristics and morphological control of silicon nanowires fabricated by metal-assisted chemical etching | Journal of Materials Science vol.48, pp1755-1762 | 刘孔 | 曲胜春 | 2.163 |
96 | Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by incorporating silver nanoparticles | Nanoscale research letters vol.8,88 | 刘孔 | 曲胜春 | 2.524 |
97 | Ordered silicon nanowires prepared by template-assisted morphological design and metalassisted chemical etching | Materials Letters vol.101, pp96–98 | 刘孔 | 曲胜春 | 2.224 |
98 | Nanotetrapods: quantum dot hybrid for bulk heterojunction solar cells | Nanoscale Research Letters vol.8, 434 | 曲胜春 | 曲胜春 | 2.524 |
99 | Conjugated molecule doped polyaniline films as buffer layers in organic solar cells | Synthetic Metals vol. 178, pp18-21 | 曲胜春 | 曲胜春 | 2.109 |
100 | Synthesis of silver quantum dots decorated TiO2 nanotubes and their incorporation in organic hybrid solar cells | Journal of Nanoparticle Research vol.15, 1844 | 曲胜春 | 曲胜春 | 2.175 |
101 | Large enhancement of sub-band-gap light absorption of sulfur hyperdop- ed silicon by surface dome structures | Materials Letters vol.107, pp50-52 | 曲胜春 | 曲胜春 | 2.224 |
102 | Photovoltaic performance optimization of methyl 4-[6,6]-C61-benzoate based polymer solar cells with thermal annealing approach | Synthetic Metals vol.181, pp117-122 | 池丹 | 曲胜春 | 2.109 |
103 | InAs/GaAs submonolayer quantum- dot superluminescent diodes by Using with active multimode interferometer configuration | Chin. Phys. B 22 (4), 048102 | 李新坤 | 金鹏 | 1.148 |
104 | A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range | Chin. Phys. B 22 (9), 094211 | 魏恒 | 金鹏 | 1.148 |
105 | A mode-locked external-cavity quantum-dot laser with a variable repetition rate | Chin. Phys. B 22 (10), 104206 | 吴剑 | 金鹏 | 1.148 |
106 | Broadband Light Emission from Chirped Multiple InAs Quantum Dot Structur | Chin. Phys. Lett. 30 (11), 118102 | 吕雪芹 | 金鹏 | 0.811 |
107 | Vacuum Rabi Splitting of Exciton– Polariton Emission in an AlN | Sci. Rep.3, 3551 | 王维颖 | 康俊勇 | 2.927 |
108 | Optical investigation of strong exciton localization in high Al composition AlxGa1-xN alloys | Optics Express 21(21), 24497-24503 | 李维 | 秦志新 | 3.546 |
109 | Numerical computation of pyramidal quantum dots with band non-parabolicity | Superlattices and Microstructures vol.61,pp 81–90 | 王占国 | 龚亮 | 1.564 |
110 | Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors | Chin. Phys. B Vol. 22, No. 4, 047102 | 王占国 | 林兆军 | 1.148 |
111 | Electron mobility in the linear region of AlGaN_AlN_GaN heterostructure field-effect transistor | Chin. Phys. B Vol. 22, No. 6, 067203 | 王占国 | 林兆军 | 1.148 |
112 | The effect of magnetic ordering on light emitting intensity of Eu-doped GaN | J. Phys. D: Appl. Phys. Vol. 46, 215101 | 孟宪权 | 孟宪权 | 2.528 |
113 | High performance AlGaN/GaN power switch with Si3N4 Insulation | Eur.Phys.J.Appl.Phys 61:10101 | 林德峰 | 王晓亮 | 0.71 |
114 | Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer | Journal of Alloys and Compounds 576:48–53 | 彭恩超 | 王晓亮 | 2.39 |
115 | Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers | Journal of Crystal Growth 383:25–29 | 彭恩超 | 王晓亮 | 1.552 |
116 | Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width | Journal of Applied Physics 114:154507 | 彭恩超 | 王晓亮 | 2.21 |
117 | The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy | Chinese Physics Letter 30:057101 | 万晓佳 | 王晓亮 | 0.811 |
118 | Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell | Physica B 414:110–114 | 李志东 | 王晓亮 | 1.327 |
119 | Growth and Fabrication of InGaN/ GaN Multi-Quantum Well Solar Cells on Si(111) Substrates | Chinese Physics Letters 30:068402 | 李志东 | 王晓亮 | 0.811 |
120 | Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double. | Thin solid films 534(2013)655-658 | 刘贵鹏 | 吕燕伍 | 1.604 |
121 | Numerical analysis on quantum dots-in-a-well structures by finite difference method | Superlattices and Microstructures 60 (2013) 311–319 | 朱勤生 | 朱勤生 | 1.564 |
122 | A Chirped Subwavelength Grating With Both Reflection and Transmission Focusing, | IEEE Phtonics Journal, Vol.5, No.2, 2200907 | Hongyan Yu | 潘教青 | 2.356 |
Large Area Uniform Microstructures on Silicon Surface Created With a Picosecond Laser Beam Scanning | Advanced Materials Research Vol.651, pp. 327-332 (2013) | 王熙元 | 黄永光 | EI | |
Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting | Journal of Semiconductor Vol.34, Issue 6, pp. 063001 (2013) | 王熙元 | 黄永光 | EI | |
半导体锁模激光器的最新研究进展 | 激光与光电子学进展2013年05期 | 王火雷 | 王火雷 | EI | |
飞秒激光与准分子激光制作碲掺杂硅探测器 | 中国激光Vol.40, Issue 3, pp. 302001 (2013) | 王熙元 | 朱洪亮 | EI | |
采用IFVD量子阱混杂技术制备电吸收调制分布反馈激光器 | 光电子?激光，Vol.24, Issue 8, pp.1451-1455 (2013) | 张灿 | 张灿 | EI | |
单片集成10信道多波长光源 | 中国激光，Vol.40, Issue 12, pp.4012001 -1-5 (2013) | 张灿 | 张灿 | EI | |
Defect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching Method | Silicon Carbide and Related Materials | 董林 | 孙国胜 | EI | |
4H-SiC Epitaxial Growth by Warm-wall Planetary Reactor | Silicon Carbide and Related Materials | 董林 | 孙国胜 | EI | |
Structural and Magnetic Properties of Yb-Implanted GaN. | Journal of Semiconductors | 尹春海 | 刘超 | EI | |
II-VI族材料在叠层太阳能电池中的应用 | 真空科学与技术学报, 33 (2013) 271-276 | 杨秋旻 | 曾一平 | EI | |
快速退火对ZnTe外延层性能及In 电极的影响 | 半导体技术, 38 (2013) 110-113 | 杨秋旻 | 曾一平 | EI |